DR和CR和DDR爱和喜欢的区别是什么么

来源：蜘蛛抓取(WebSpider) 时间：2018-03-19 20:13 标签： 散文和小说区别是什么
DDR和DDR2，DDR3的区别以及如何从外观上分辨出来(图文)
互联网 & 06-21 10:54:02 & 作者：佚名 &
内存现在有三种DDR,DDR2,DDR3.三种有什么不同呢.怎么从外观上来分辨呢.
1.防呆缺口 DDR内存单面金手指针脚数量为92个（双面184个），缺口左边为52个针脚，制品右边为40个针脚；DDR2内存单面金手指120个（双面240个），缺口左边为64个针脚，缺口右边为56个针脚；DDR3内存单面金手指也是120个（双面240个），缺口左边为72个针脚，缺口右边为48个针脚.2、DDR内存的颗粒为长方形DDR2和DDR3内存的颗粒为正方形,而且体积大约只有DDR内存颗粒的三分之一3、使用电压不同DDR2的电压1.8VDDR3的电压1.5V&参数不同之处
电压 VDD/VDDQ
1.8V/1.8V(&0.1)
1.5V/1.5V(&0.075)
数据传输率(Mbps)
Memory Latency(ns)
1.5/2/2.5/3
预取设计(Bit)
逻辑Bank数量
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最近更新的内容client: 180.112.31.11, server: 7abacd8, time:TPS51200DRCR (TI) PDF技术资料下载
TPS51200DRCR 供应信息 IC Datasheet 数据表 (1/35 页)
按型号查询：
TPS51200DRCR
漏/源DDR终端稳压器
[SINK/SOURCE DDR TERMINATION REGULATOR]
&&TPS51200DRCRPDF文件：
漏/源DDR终端稳压器[SINK/SOURCE DDR TERMINATION REGULATOR]
文件大小：&&1260 KPDF页数：
&&35 页联系供应商：&& 品牌Logo:
&&&&TI [ TEXAS INSTRUMENTS ]
TPS51200DRCR&&
TPS51200DRCR&&
进口原装假一赔十可开增值税发票&
TPS51200DRCR&&
TPS51200DRCR&&
TPS51200DRCR&&
www.ti.comSLUS812 – FEBRUARY 2008SINK/SOURCE DDR TERMINATION REGULATOR1FEATURESAPPLICATIONSoooMemory Termination Regulator for DDR,DDR2, DDR3, and Low Power DDR3/DDR4Notebook/Desktop/ServerTelecom/Datacom, GSM Base Station,LCD-TV/PDP-TV, Copier/Printer, Set-Top BoxoInput Voltage: Supports 2.5-V Rail and 3.3-VRailoVLDOIN Voltage Range: 1.1 V to 3.5 VoSink/Source Termination Regulator IncludesDroop CompensationoRequires Minimum Output Capacitance of20-uF (typically 3×10-uF MLCCs) for MemoryTermination Applications (DDR)oPGOOD to Monitor Output RegulationoEN InputoREFIN Input Allows for Flexible Input TrackingEither Directly or Through Resistor DivideroRemote Sensing (VOSNS)o±10-mA Buffered Reference (REFOUT)oBuilt-in Soft Start, UVLO and OCLoThermal ShutdownoMeets DDR, DDR2 JEDEC SSupports DDR3 and Low-Power DDR3/DDR4VTT ApplicationsoSON-10 PowerPAD(TM)Package2DESCRIPTIONThe TPS51200 is a sink/source Double Data Rate(DDR) termination regulator specifically designed forlow input voltage, low-cost, low-noise systems wherespace is a key consideration.The TPS51200 maintains a fast transient responseand only requires a minimum output capacitance of20uF.The TPS51200 supports a remote sensingfunction and all power requirements for DDR, DDR2,DDR3, and Low Power DDR3/DDR4 VTT bustermination.In addition, the TPS51200 provides an open-drainPGOOD signal to monitor the output regulation andan EN signal that can be used to discharge VTTduring S3 (suspend to RAM) for DDR applications.The TPS51200 is available in the thermally-efficientSON-10 PowerPAD package, and is rated bothGreen and Pb-free. It is specified from -40°C to+85°C.STANDARD DDR APPLICATIONTPS51200VDDQ1REFINVIN 103.3 VINVLDOINVTT2345VLDOIN PGOODVOPGNDGNDEN98760.1mFPGOODSLP_S3VTTREFVOSNS REFOUTUDG-0802512Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PowerPAD is a trademark of Texas Instruments.Copyright (C) 2008, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

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